TRVolatile1.31V ~ 1.65V4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

Select SDRAM

Home

Category

SDRAM

Total: 2

MT48LC8M8A2P-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC16M8A2P-6A IT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

128Mb(16M x 8)

64Mb(8M x 8)

4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)

Voltage - Supply

1.31V ~ 1.65V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

Reset

Click the button below to copy the WeChat

Offer Table

Model

Num

Company

Email

We will reply to you through your email address as soon as we receive your offer