TR512Mb(32M x 16)Paralleling0°C ~ 70°C(TA)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

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Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥8.57

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

packing

TR

Memory type

Volatile

storage capacity

512Mb(32M x 16)

Voltage - Supply

3V ~ 3.6V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

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