TR,CTVolatile556-WFBGA4Gb(256M x 16)(NAND),4Gb(128M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC8M16A2B4-75 IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

MT48LC2M32B2TG-6:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 86TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

Memory type

Volatile

storage capacity

128Mb(8M x 16)

128Mb(4M x 32)

4Gb(256M x 16)(NAND),4Gb(128M x 32)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

556-WFBGA

54-VFBGA

86-TFSOP(0.400,10.16mm wide)

technology

SDRAM

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