Volatile-40°C ~ 105°C(TA)86-TFSOP(0.400,10.16mm wide)1.3V ~ 1.545V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 5

MT48LC4M32B2P-6A AAT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 86TSOP II

MT48LC2M32B2P-6A AAT:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 86TSOP II

MT48LC2M32B2P-6A AAT:J

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 86TSOP II

MT48LC4M32B2P-6A AAT:L

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 86TSOP II

Price：1+

￥45.00

MT48LC2M32B2P-7:G

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 86TSOP II

Price：1+

￥6.25

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

PCM(PRAM)

packing

bulk

pallet

TR,CT

Memory type

Volatile

storage capacity

128Mb(4M x 32)

64MB

Voltage - Supply

1.3V ~ 1.545V

working temperature

-40°C ~ 105°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

86-TFSOP(0.400,10.16mm wide)

216-WFBGA

technology

SDRAM

TLC

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