Volatile8Mb(512K x 16)-25°C ~ 85°C(TC)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC4M32B2B5-6:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

MT48LC32M4A2P-7E:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

box

Memory type

Volatile

storage capacity

128Mb(32M x 4)

8Mb(512K x 16)

128Mb(4M x 32)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

-25°C ~ 85°C(TC)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

SDRAM

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