Volatile0°C ~ 70°C(TA)44-SOIC(0.525,13.34mm wide)768Gb(96G x 8)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC4M16A2TG-6:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC16M8A2FB-7E:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

box

Memory type

Volatile

storage capacity

64Mb(4M x 16)

128Mb(16M x 8)

768Gb(96G x 8)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

44-SOIC(0.525,13.34mm wide)

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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