TR128Mb(8M x 16)2.3V ~ 2.7V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

Select SDRAM

Home

Category

SDRAM

Total: 3

IS42RM16800G-6BLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54TFBGA

IS42RM16800H-6BLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54TFBGA

Price：1+

￥6.02

IS42RM16800H-75BLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54TFBGA

Price：1+

￥5.72

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

packing

TR

Memory type

Volatile

storage capacity

128Mb(8M x 16)

Voltage - Supply

2.3V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TFBGA

technology

Reset

Click the button below to copy the WeChat

Offer Table

Model

Num

Company

Email

We will reply to you through your email address as soon as we receive your offer