TR,CTParalleling4Gb(128M x 32)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

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MT48LC2M32B2TG-7 IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 86TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

Memory type

Volatile

storage capacity

4Gb(128M x 32)

128Mb(4M x 32)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

86-TFSOP(0.400,10.16mm wide)

technology

SDRAM

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