VolatileParallelingFLASH - NOR,LPDDR SDRAM64Mb(8M x 8,4M x 16)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC32M8A2P-6A:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC64M4A2TG-75:D TR

Store: ShenZhen/Hongkong

Description：IC SDRAM 256MBIT 133MHZ 54TSOP

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

256Mb(64M x 4)

64Mb(8M x 8,4M x 16)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

FLASH - NOR,LPDDR SDRAM

SDRAM

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