TR,CTVolatileParalleling60-TFBGA1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-6A AAT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC8M8A2P-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

Memory type

Volatile

storage capacity

128Mb(16M x 8)

64Mb(8M x 8)

1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)

32MB

Voltage - Supply

working temperature

-40°C ~ 105°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-TFBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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