VolatileParalleling4Gb(512M x 8)(NAND),2G(64M x 32)(LPDRAM)1.21V ~ 1.29V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC2M32B2B5-7 IT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PARALLEL 90VFBGA

Price：1+

￥1.33

MT48LC16M16A2P-6A:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥1.75

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(4M x 32)

4Gb(512M x 8)(NAND),2G(64M x 32)(LPDRAM)

Voltage - Supply

1.21V ~ 1.29V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

SDRAM

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