TR,CTVolatile96-TFBGA4Gb(512M x 8)(NAND),2G(64M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M16A2P-6A:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥1.75

MT48LC8M16A2P-6A XIT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Price：1+

￥9.71

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(8M x 16)

4Gb(512M x 8)(NAND),2G(64M x 32)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

96-TFBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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