Volatile8-UDFN Exposed Pad4Gb(256M x 16)(NAND),2G(128M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC2M32B2B5-6A AAT:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PARALLEL 90VFBGA

MT48LC16M16A2TG-7E L:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(4M x 32)

4Gb(256M x 16)(NAND),2G(128M x 16)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 105°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

8-UDFN Exposed Pad

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

SDRAM

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