Volatile1.1V4Gb(256M x 16)(NAND),2Gb(64M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC2M32B2B5-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PARALLEL 90VFBGA

Price：1+

￥2.00

MT48LC16M16A2P-7E:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥3.56

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(4M x 32)

4Gb(256M x 16)(NAND),2Gb(64M x 32)(LPDRAM)

Voltage - Supply

1.1V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

SDRAM

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