VolatileParallelingSDRAM1.31V ~ 1.39V,1.46V ~ 1.55V1Gb(64M x 16)(NAND),512Mb(32M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 5

MT48LC16M16A2P-6A AAT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC4M16A2B4-7E:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PARALLEL 54VFBGA

MT48LC16M8A2BB-6A:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC64M8A2P-75 IT:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥8.87

MT48LC16M16A2P-6A IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥5.72

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(64M x 8)

64Mb(4M x 16)

128Mb(16M x 8)

1Gb(64M x 16)(NAND),512Mb(32M x 16)(LPDRAM)

Voltage - Supply

1.31V ~ 1.39V,1.46V ~ 1.55V

working temperature

-40°C ~ 85°C(TA)

-40°C ~ 105°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

54-TSOP(0.400,10.16mm wide)

54-VFBGA

technology

SDRAM

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