VolatileParalleling2.5V ~ 3.3V1Gb(64M x 16)(NAND),512Mb(16M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 2

MT48LC4M16A2P-7E:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

Price：1+

￥1.75

MT48LC16M16A2P-7E L:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

64Mb(4M x 16)

1Gb(64M x 16)(NAND),512Mb(16M x 32)(LPDRAM)

Voltage - Supply

2.5V ~ 3.3V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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