Volatile8-UDFN Exposed Pad1Gb(128M x 8)(NAND),1Gb(32M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC4M32B2P-6A AIT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 86TSOP II

MT48LC16M16A2TG-7E L:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(4M x 32)

1Gb(128M x 8)(NAND),1Gb(32M x 32)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

8-UDFN Exposed Pad

54-TSOP(0.400,10.16mm wide)

86-TFSOP(0.400,10.16mm wide)

technology

SDRAM

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