VolatileParalleling0°C ~ 70°C(TA)4Gb(256M x 16)(NAND),2Gb(128M x 16)(LPDRAM)63-VFBGA(9x11)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M16A2P-7E:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥11.40

MT48LC8M16A2P-7E:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Price：1+

￥39.00

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(8M x 16)

4Gb(256M x 16)(NAND),2Gb(128M x 16)(LPDRAM)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

63-VFBGA(9x11)

technology

SDRAM

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