Volatile0°C ~ 70°C(TA)FLASH - Boot block54-TSOP(0.400,10.16mm wide)4Gb(512M x 8)(NAND),4Gb(128M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC8M8A2P-7E:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC64M8A2P-75:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥17.19

MT48LC64M8A2TG-75:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥30.00

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

512Mb(64M x 8)

64Mb(8M x 8)

4Gb(512M x 8)(NAND),4Gb(128M x 32)(LPDRAM)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

FLASH - Boot block

SDRAM

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