VolatileParalleling54-TSOP(0.400,10.16mm wide)1.2V8Gb(1G x 8)(NAND),4Gb(128M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC16M16A2P-6A AIT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥2.00

MT48LC16M16A2P-7E:D

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥6.25

MT48LC64M8A2P-75:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥17.19

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

bulk

pallet

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(64M x 8)

8Gb(1G x 8)(NAND),4Gb(128M x 32)(LPDRAM)

Voltage - Supply

1.2V

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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