bulkVolatile60-TFBGASDRAM8Gb(1G x 8)(NAND),4Gb(128M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 2

MT48LC16M8A2BB-6A AIT:L

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60TFBGA

MT48LC16M16A2P-6A AIT:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥2.00

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

bulk

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(16M x 8)

8Gb(1G x 8)(NAND),4Gb(128M x 32)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-TFBGA

54-TSOP(0.400,10.16mm wide)

132-VBGA(12x18)

technology

SDRAM

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