VolatileParallelingEMMC4Gb(512M x 8)(NAND),2Gb(128M x 16)(LPDDR2)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M16A2P-6A L:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC16M8A2BB-6A AIT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(16M x 8)

4Gb(512M x 8)(NAND),2Gb(128M x 16)(LPDDR2)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

EMMC

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