TR,CTVolatile256Mb(64M x 4)3V ~ 3.6V54-TSOP(0.400,10.16mm wide)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC64M4A2P-75:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC8M16A2P-6A:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Price：1+

￥3.81

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

Memory type

Volatile

storage capacity

256Mb(64M x 4)

128Mb(8M x 16)

512Mb(16M x 32)

Voltage - Supply

3V ~ 3.6V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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