VolatileParalleling2.5V ~ 3.3V1Gb(128M x 8)(NAND),256Mb(8M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2P-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

MT48LC16M16A2P-7E L:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(16M x 8)

1Gb(128M x 8)(NAND),256Mb(8M x 32)(LPDRAM)

Voltage - Supply

2.5V ~ 3.3V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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