Volatile0°C ~ 70°C(TA)SDRAM2.3V ~ 2.7V576Mb(16M x 36)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-7E:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC8M16A2TG-6A:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

128Mb(16M x 8)

128Mb(8M x 16)

576Mb(16M x 36)

Voltage - Supply

2.3V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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