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SDRAM

Total: 4

MT48LC64M4A2P-7E:G TR
Brand：Micron
Stock：13952
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 54TSOP II
Offer
MT48LC64M4A2P-6A:G TR
Brand：Micron
Stock：18798
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 54TSOP II
Offer
MT48LC16M8A2BB-6A:L TR
Brand：Micron
Stock：16415
Store: ShenZhen/Hongkong
Description：IC DRAM 128MBIT PARALLEL 60FBGA
Offer
MT48LC64M4A2P-7E:D TR
Brand：Micron
Stock：12561
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PAR 54TSOP II
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format
packing

TR

Memory type

Volatile

storage capacity

256Mb(64M x 4)

128Mb(16M x 8)

1Gb(64M x 16)(NAND),256Mb(16M x 16)(LPDRAM)

1Gb(64M x 16)(NAND),256Mb(8M x 32)(LPDRAM)

Voltage - Supply

1.31V ~ 1.39V,1.46V ~ 1.55V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

169-VFBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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