TRVolatile256Mb(16M x 16)-40°C ~ 85°C(TA)1.31V ~ 1.65V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 4

MT48LC16M16A2P-7E AIT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC16M8A2P-6A IT:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

MT48LC16M16A2P-7E IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥3.88

MT48LC16M16A2B4-7E IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54VFBGA

Price：1+

￥9.27

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(16M x 8)

Voltage - Supply

1.31V ~ 1.65V

working temperature

-40°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

54-VFBGA

technology

SDRAM - DDR4

SDRAM

SDRAM - DDR2

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