Volatile0°C ~ 70°C(TA)24-LBGASDRAM288Mb(8M x 36)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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MT48LC8M16A2F4-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 54VFBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

128Mb(8M x 16)

288Mb(8M x 36)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-VFBGA

technology

SDRAM

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