TR256Mb(16M x 16)1.7V ~ 1.95V0°C ~ 70°C(TA)54-TFBGA-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

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IS42VM16160D-8BL-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54TFBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

Voltage - Supply

1.7V ~ 1.95V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TFBGA

technology

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