TRVolatile-25°C ~ 85°C(TC)SDRAM1.31V ~ 1.39V,1.46V ~ 1.55V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-6A:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC4M32B2B5-6:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

128Mb(16M x 8)

128Mb(4M x 32)

Voltage - Supply

1.31V ~ 1.39V,1.46V ~ 1.55V

working temperature

0°C ~ 70°C(TA)

-25°C ~ 85°C(TC)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

90-VFBGA

technology

SDRAM

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