VolatileParalleling4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)132-VBGA(12x18)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-6A AIT:L

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60TFBGA

MT48LC8M8A2P-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

bulk

TR

Memory type

Volatile

storage capacity

128Mb(16M x 8)

64Mb(8M x 8)

4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-TFBGA

54-TSOP(0.400,10.16mm wide)

132-VBGA(12x18)

technology

SDRAM

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