VolatileParalleling2.7V ~ 3.3V54-TSOP(0.400,10.16mm wide)1.125Gb(32Mb x 36)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC4M16A2P-6:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC64M8A2P-75:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥17.19

MT48LC16M16A2TG-6A:D

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Price：1+

￥6.31

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(64M x 8)

64Mb(4M x 16)

1.125Gb(32Mb x 36)

Voltage - Supply

2.7V ~ 3.3V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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