VolatileParalleling60-TFBGA0°C ~ 70°C(TA)1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC64M4A2BB-6A:G

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 60TFBGA

MT48LC8M8A2P-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

256Mb(64M x 4)

64Mb(8M x 8)

1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-TFBGA

54-TSOP(0.400,10.16mm wide)

64-FBGA

technology

SDRAM

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