256Mb(16M x 16)-40°C ~ 85°C(TA)3V ~ 3.6V54-LFBGA-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

IS42S16160B-6BLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54LFBGA

IS42S16160B-7BLI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54LFBGA

Price：1+

￥6.33

IS42S16160B-7BI-TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54LFBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

Voltage - Supply

3V ~ 3.6V

working temperature

-40°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-LFBGA

technology

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