VolatileParalleling0°C ~ 70°C(TA)8-UDFN Exposed Pad1.31V ~ 1.39V,1.46V ~ 1.55V-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-6A:L TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC16M16A2TG-7E L:D TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

128Mb(16M x 8)

Voltage - Supply

1.31V ~ 1.39V,1.46V ~ 1.55V

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

8-UDFN Exposed Pad

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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