VolatileParalleling8-UFDFN Exposed Pad1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC8M8A2P-75:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC16M4A2P-75:G

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

Price：1+

￥3.70

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR,CT

Memory type

Volatile

storage capacity

64Mb(16M x 4)

64Mb(8M x 8)

1Gb(128M x 8)(NAND),512M(16M x 32)(LPDRAM)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

8-UFDFN Exposed Pad

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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