Volatile0°C ~ 70°C(TA)16Gb(2G x 8)100-VBGASDRAM-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC32M8A2TG-6A:D

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 54TSOP II

MT48LC128M4A2TG-75:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

box

TR,CT

Memory type

Volatile

storage capacity

256Mb(32M x 8)

512Mb(128M x 4)

16Gb(2G x 8)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

100-VBGA

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

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