Volatile0°C ~ 70°C(TA)153-TFBGASDRAM576Mb(16M x 36)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC16M8A2BB-7E:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 60FBGA

MT48LC4M32B2TG-7:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 86TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

TR,CT

Memory type

Volatile

storage capacity

128Mb(16M x 8)

128Mb(4M x 32)

576Mb(16M x 36)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

60-FBGA

153-TFBGA

86-TFSOP(0.400,10.16mm wide)

technology

SDRAM

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