Volatile512Mb(64M x 8)Paralleling3V ~ 3.6V90-VFBGA-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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MT48LC64M8A2P-7E:C TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

512Mb(64M x 8)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

SDRAM

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