VolatileParalleling-20°C ~ 85°C(TA)137-TFBGA-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 2

MT48LC4M16A2B4-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PARALLEL 54VFBGA

MT48LC32M16A2TG-75 L:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥27.50

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

box

Memory type

Volatile

storage capacity

512Mb(32M x 16)

64Mb(4M x 16)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

-20°C ~ 85°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

54-VFBGA

137-TFBGA

technology

SDRAM

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