VolatileSDRAM - DDR44Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 2

MT48LC8M8A2P-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC16M16A2B4-7E IT:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 54VFBGA

Price：1+

￥9.27

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

256Mb(16M x 16)

64Mb(8M x 8)

4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

54-VFBGA

technology

SDRAM - DDR4

SDRAM

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