VolatileParalleling64Gb(1G x 64)FLASH - NOR,LPDDR SDRAM-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC64M4A2TG-75:D TR

Store: ShenZhen/Hongkong

Description：IC SDRAM 256MBIT 133MHZ 54TSOP

MT48LC4M32B2F5-7:G TR

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PARALLEL 90VFBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR,CT

CT

Memory type

Volatile

storage capacity

256Mb(64M x 4)

64Gb(1G x 64)

128Mb(4M x 32)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

90-VFBGA

technology

FLASH - NOR,LPDDR SDRAM

SDRAM

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