Volatile0°C ~ 70°C(TA)54-TSOP(0.400,10.16mm wide)SDRAM - DDR4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 3

MT48LC8M8A2P-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC8M16A2P-75:G

Store: ShenZhen/Hongkong

Description：IC DRAM 128MBIT PAR 54TSOP II

Price：1+

￥7.66

MT48LC64M8A2P-75:C

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PAR 54TSOP II

Price：1+

￥17.19

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

pallet

TR

Memory type

Volatile

storage capacity

512Mb(64M x 8)

128Mb(8M x 16)

64Mb(8M x 8)

4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)

Voltage - Supply

working temperature

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

technology

SDRAM

SDRAM - DDR

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