TRVolatileParallelingLPDDR54Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)-SDRAM[Parameters, quotations, pictures, datasheet]-ICQQG

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SDRAM

Total: 2

MT48LC8M8A2P-6A:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 64MBIT PAR 54TSOP II

MT48LC8M32B2P-7 IT TR

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PAR 86TSOP II

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

packing

TR

Memory type

Volatile

storage capacity

64Mb(8M x 8)

128Mb(4M x 32)

4Gb(512M x 8)(NAND),4Gb(256M x 16)(LPDRAM)

Voltage - Supply

working temperature

-40°C ~ 85°C(TA)

0°C ~ 70°C(TA)

Memory interface

Paralleling

Encapsulation/Housing

54-TSOP(0.400,10.16mm wide)

86-TFSOP(0.400,10.16mm wide)

technology

SDRAM

LPDDR5

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