MOSFET SIC 1200 V 360 MOHM TO-26 MSC360SMA120S
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Description:
MOSFET SIC 1200 V 360 MOHM TO-26
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
MSC360SMA120S(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74576,Price reference "real-time change" China/Hongkong。 MSC360SMA120S package/specs, Download MSC360SMA120S、Datasheet。