MOSFET N-CH 60V 120A D2PAK STB200N6F3
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Description:
MOSFET N-CH 60V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STB200N6F3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11252,Price reference "real-time change" China/Hongkong。 STB200N6F3 package/specs, Download STB200N6F3、Datasheet。