MOSFET N-CH 650V 24A TO220 STP33N65M2
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Description:
MOSFET N-CH 650V 24A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP33N65M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72533,Price reference "real-time change" China/Hongkong。 STP33N65M2 package/specs, Download STP33N65M2、Datasheet。