MOSFET N-CH 30V 8.8A/41A DPAK NTD4909NAT4G
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Description:
MOSFET N-CH 30V 8.8A/41A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4909NAT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37131,Price reference "real-time change" China/Hongkong。 NTD4909NAT4G package/specs, Download NTD4909NAT4G、Datasheet。