MOSFET N-CH 100V 32A DPAK STD30N10F7
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Description:
MOSFET N-CH 100V 32A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD30N10F7(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80115,Price reference "real-time change" China/Hongkong。 STD30N10F7 package/specs, Download STD30N10F7、Datasheet。