STH265N6F6-2AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STH265N6F6-2AG

Description:

MOSFET N-CH 60V 180A H2PAK-2

Stock:

99042

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

180A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

183 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

11800 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

2.1 mΩ @ 60A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101, STripFET™ F6

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

H2Pak-2

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

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STH265N6F6-2AG（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99042,Price reference "real-time change" China/Hongkong。 STH265N6F6-2AG package/specs, Download STH265N6F6-2AG、Datasheet。